Carat has extended integrated, in-situ Bias-Enhanced Nucleation to 100 mm silicon wafers. For diamond-on-silicon programs, BEN gives customers a route to nucleation that is continuous with growth, contamination-controlled, and free from mechanical slurry abrasion. The goal is better adhesion, fewer interface voids and particles, and lower thermal boundary resistance than comparable seeded interfaces.
Send substrate dimensions, target diamond thickness, required surface finish, application environment, and any acceptance criteria. Carat can help determine whether the proper next step is a sample coating, process development program, material supply discussion, or reactor configuration review.
Representative 100 mm wafer work is shown together with 532 nm Raman spectroscopy from a 115 micron thick CVD diamond layer. The Raman data show the diamond peak centered near 1332 cm-1 with no graphitic shoulder. Across seven points along the 100 mm wafer diameter, the reported average FWHM was 3.8 cm-1 with a 0.8 cm-1 standard deviation.
The wafer image and Raman result support the same development direction: wafer-scale CVD diamond growth and BEN-enabled interface development for diamond-on-silicon, thermal, photonic, detector, and device-stack applications.
100 mm wafer for BEN and CVD diamond interface development.
Representative 532 nm Raman spectrum from a 115 micron thick CVD diamond layer on a 100 mm wafer. The diamond peak is centered near 1332 cm-1.